DiodesZetex Type P-Channel MOSFET, 197 mA, 250 V Enhancement, 6-Pin SOT-23
- RS stock no.:
- 122-1265
- Mfr. Part No.:
- ZVP4525E6TA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 18 996,00
(exc. VAT)
R 21 846,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 6.332 | R 18,996.00 |
| 6000 - 9000 | R 6.174 | R 18,522.00 |
| 12000 - 27000 | R 5.988 | R 17,964.00 |
| 30000 - 45000 | R 5.749 | R 17,247.00 |
| 48000 + | R 5.519 | R 16,557.00 |
*price indicative
- RS stock no.:
- 122-1265
- Mfr. Part No.:
- ZVP4525E6TA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 197mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 18Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Typical Gate Charge Qg @ Vgs | 2.45nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.75 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 197mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 18Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Typical Gate Charge Qg @ Vgs 2.45nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Operating Temperature 150°C | ||
Width 1.75 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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