onsemi UniFET Type N-Channel MOSFET, 680 mA, 25 V Enhancement, 3-Pin SOT-23 FDV303N
- RS stock no.:
- 121-2747
- Mfr. Part No.:
- FDV303N
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 100 units)*
R 180,60
(exc. VAT)
R 207,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,400 unit(s) ready to ship from another location
- Plus 16,700 unit(s) shipping from 07 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 1.806 | R 180.60 |
| 500 - 900 | R 1.76 | R 176.00 |
| 1000 - 1900 | R 1.708 | R 170.80 |
| 2000 - 2900 | R 1.639 | R 163.90 |
| 3000 + | R 1.574 | R 157.40 |
*price indicative
- RS stock no.:
- 121-2747
- Mfr. Part No.:
- FDV303N
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | UniFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | -1.6V | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Height | 0.93mm | |
| Width | 1.3 mm | |
| Distrelec Product Id | 304-36-911 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Series UniFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf -1.6V | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Height 0.93mm | ||
Width 1.3 mm | ||
Distrelec Product Id 304-36-911 | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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