onsemi Isolated 2 Type P, Type N-Channel MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23 FDC6321C
- RS stock no.:
- 354-4985
- Mfr. Part No.:
- FDC6321C
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
R 12,25
(exc. VAT)
R 14,09
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 649 unit(s) shipping from 29 December 2025
- Plus 4,907 unit(s) shipping from 05 January 2026
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Units | Per unit |
|---|---|
| 1 - 24 | R 12.25 |
| 25 - 99 | R 11.94 |
| 100 - 249 | R 11.58 |
| 250 - 499 | R 11.12 |
| 500 + | R 10.68 |
*price indicative
- RS stock no.:
- 354-4985
- Mfr. Part No.:
- FDC6321C
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Maximum Gate Source Voltage Vgs | -8/8 V | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.89V | |
| Maximum Power Dissipation Pd | 900mW | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Width | 1.7 mm | |
| Length | 3mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Maximum Gate Source Voltage Vgs -8/8 V | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.89V | ||
Maximum Power Dissipation Pd 900mW | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Width 1.7 mm | ||
Length 3mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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