STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 84 A, 710 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 103-2004
- Mfr. Part No.:
- STW88N65M5
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 6 842,79
(exc. VAT)
R 7 869,21
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 13 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 228.093 | R 6,842.79 |
| 60 - 90 | R 222.39 | R 6,671.70 |
| 120 - 270 | R 215.719 | R 6,471.57 |
| 300 - 570 | R 207.09 | R 6,212.70 |
| 600 + | R 198.806 | R 5,964.18 |
*price indicative
- RS stock no.:
- 103-2004
- Mfr. Part No.:
- STW88N65M5
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 710V | |
| Series | MDmesh M5 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 204nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Maximum Power Dissipation Pd | 450W | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 710V | ||
Series MDmesh M5 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 204nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Maximum Power Dissipation Pd 450W | ||
Maximum Operating Temperature 150°C | ||
Height 20.15mm | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Related links
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