STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 69 A, 710 V Enhancement, 3-Pin TO-247 STW78N65M5
- RS stock no.:
- 791-7970
- Mfr. Part No.:
- STW78N65M5
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 1 528,00
(exc. VAT)
R 1 757,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 09 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 305.60 | R 1,528.00 |
| 50 - 145 | R 297.96 | R 1,489.80 |
| 150 - 295 | R 289.022 | R 1,445.11 |
| 300 - 595 | R 277.462 | R 1,387.31 |
| 600 + | R 266.364 | R 1,331.82 |
*price indicative
- RS stock no.:
- 791-7970
- Mfr. Part No.:
- STW78N65M5
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 710V | |
| Package Type | TO-247 | |
| Series | MDmesh M5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 203nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 450W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.15mm | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 710V | ||
Package Type TO-247 | ||
Series MDmesh M5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 203nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 450W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 20.15mm | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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