STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 5.8 A, 900 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 103-1575
- Mfr. Part No.:
- STP6NK90ZFP
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 tube of 50 units)*
R 1 842,75
(exc. VAT)
R 2 119,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 850 unit(s) shipping from 02 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 36.855 | R 1,842.75 |
| 100 - 150 | R 35.934 | R 1,796.70 |
| 200 - 450 | R 34.856 | R 1,742.80 |
| 500 - 950 | R 33.462 | R 1,673.10 |
| 1000 + | R 32.123 | R 1,606.15 |
*price indicative
- RS stock no.:
- 103-1575
- Mfr. Part No.:
- STP6NK90ZFP
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-220 | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 30W | |
| Typical Gate Charge Qg @ Vgs | 46.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 9.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-220 | ||
Series MDmesh, SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 30W | ||
Typical Gate Charge Qg @ Vgs 46.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 9.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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