STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 5.8 A, 900 V Enhancement, 3-Pin TO-220 STP6NK90Z
- RS stock no.:
- 687-5330
- Mfr. Part No.:
- STP6NK90Z
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 2 units)*
R 121,24
(exc. VAT)
R 139,42
(inc. VAT)
Add 28 units to get free delivery
In Stock
- 174 unit(s) ready to ship from another location
- Plus 902 unit(s) shipping from 19 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 60.62 | R 121.24 |
| 10 - 18 | R 59.105 | R 118.21 |
| 20 - 48 | R 57.33 | R 114.66 |
| 50 - 98 | R 55.035 | R 110.07 |
| 100 + | R 52.835 | R 105.67 |
*price indicative
- RS stock no.:
- 687-5330
- Mfr. Part No.:
- STP6NK90Z
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 46.5nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.15mm | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 46.5nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.15mm | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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