STMicroelectronics STHU65N1 N channel-Channel Power MOSFET, 26 A, 650 V N, 7-Pin HU3PAK STHU65N110DM9AG

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R 67,79

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R 77,96

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1 - 9R 67.79
10 - 24R 66.10
25 - 99R 64.12
100 - 499R 61.56
500 +R 59.10

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RS stock no.:
762-553
Mfr. Part No.:
STHU65N110DM9AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

650V

Package Type

HU3PAK

Series

STHU65N1

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

78nC

Maximum Power Dissipation Pd

179W

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Length

11.9mm

Height

0.95mm

Standards/Approvals

AEC-Q101

Width

14.1mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.

Very low FOM

Higher dv/dt capability

Excellent switching performance

100% avalanche tested

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