STMicroelectronics N-Channel STHU60 Type N-Channel MOSFET, 54 A, 600 V Enhancement, 7-Pin HU3PAK STHU60N046DM9AG
- RS stock no.:
- 481-130
- Mfr. Part No.:
- STHU60N046DM9AG
- Manufacturer:
- STMicroelectronics
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Subtotal (1 reel of 600 units)*
R 74 080,80
(exc. VAT)
R 85 192,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- Shipping from 01 December 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 600 + | R 123.468 | R 74,080.80 |
*price indicative
- RS stock no.:
- 481-130
- Mfr. Part No.:
- STHU60N046DM9AG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HU3PAK | |
| Series | STHU60 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | N-Channel | |
| Height | 3.6mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 11.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HU3PAK | ||
Series STHU60 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration N-Channel | ||
Height 3.6mm | ||
Standards/Approvals AEC-Q101 | ||
Length 11.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics N-Channel Power MOSFET is based on Advanced super-junction MDmesh DM9 technology, designed for medium to high voltage applications. It features very low RDS(on) per area and an integrated fast-recovery diode. The DM9 technology uses a multi-drain manufacturing process to enhance device structure and performance. With low recovery charge (Qrr), fast recovery time (trr), and low RDS(on), this fast-switching MOSFET is Ideal for high-efficiency bridge topologies and ZVS phase-shift converters.
Low gate charge and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
AEC-Q101 qualified
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