Vishay SISS52DN N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS52DN-T1-BE3

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal (1 tape of 1 unit)*

R 25,42

(exc. VAT)

R 29,23

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Tape(s)
Per Tape
1 - 9R 25.42
10 - 24R 24.78
25 - 99R 24.04
100 +R 23.08

*price indicative

RS stock no.:
736-353
Mfr. Part No.:
SISS52DN-T1-BE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212-8S

Series

SISS52DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00095Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

16V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

38nC

Maximum Operating Temperature

150°C

Width

3.3mm

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for robust switching applications, offering excellent efficiency and reliability in power management solutions.

Tested for 100% R g and UIS, ensuring superior reliability

Material compliance categorisation enhances environmental safety

Related links