Vishay E Series N channel-Channel MOSFET, 88 A, 650 V Enhancement, 4-Pin TO-247AD SIHL026N65E-GE3

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Subtotal (1 unit)*

R 416,82

(exc. VAT)

R 479,34

(inc. VAT)

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1 - 4R 416.82
5 +R 408.45

*price indicative

RS stock no.:
735-233
Mfr. Part No.:
SIHL026N65E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

650V

Series

E Series

Package Type

TO-247AD

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

0.026Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

157nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
CN

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