Vishay E Series N channel-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247AC SIHG100N65E-GE3

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Subtotal (1 unit)*

R 116,77

(exc. VAT)

R 134,29

(inc. VAT)

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Units
Per unit
1 - 9R 116.77
10 - 49R 72.34
50 - 99R 56.06
100 +R 37.91

*price indicative

RS stock no.:
735-208
Mfr. Part No.:
SIHG100N65E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Series

E Series

Package Type

TO-247AC

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.1Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

208W

Typical Gate Charge Qg @ Vgs

41nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

20.82mm

Width

15.87 mm

Height

5.31mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
IL

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