Vishay TrenchFET N channel-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23 SI2302HDS-T1-GE3
- RS stock no.:
- 735-213
- Mfr. Part No.:
- SI2302HDS-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 unit)*
R 2,79
(exc. VAT)
R 3,21
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 26 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | R 2.79 |
| 25 + | R 1.86 |
*price indicative
- RS stock no.:
- 735-213
- Mfr. Part No.:
- SI2302HDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.71W | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.71W | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
Related links
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SI2318HDS-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 12 V Enhancement, 8-Pin PowerPAK 1212 SISF12EDN-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH602E-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 20 V Enhancement, 8-Pin 1206-8 ChipFET SI5908BDC-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3
