Vishay TrenchFET N channel-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23 SI2302HDS-T1-GE3

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Subtotal (1 unit)*

R 2,79

(exc. VAT)

R 3,21

(inc. VAT)

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Units
Per unit
1 - 24R 2.79
25 +R 1.86

*price indicative

RS stock no.:
735-213
Mfr. Part No.:
SI2302HDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.71W

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Gate Source Voltage Vgs

±8 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
US

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