Vishay TrenchFET N channel-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin 1206-8 ChipFET SI5908BDC-T1-GE3

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Subtotal (1 unit)*

R 16,98

(exc. VAT)

R 19,53

(inc. VAT)

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Units
Per unit
1 - 24R 16.98
25 - 99R 11.16
100 - 499R 5.82
500 +R 5.58

*price indicative

RS stock no.:
735-215
Mfr. Part No.:
SI5908BDC-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

1206-8 ChipFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.05Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±8 V

Maximum Power Dissipation Pd

3.1W

Typical Gate Charge Qg @ Vgs

6.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Height

1.1mm

Length

3.1mm

Width

1.975 mm

Automotive Standard

No

COO (Country of Origin):
DE

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