Vishay SIR5607DP Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin PowerPAK SIR5607DP-T1-UE3

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Subtotal (1 tape of 1 unit)*

R 48,68

(exc. VAT)

R 55,98

(inc. VAT)

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1 - 9R 48.68
10 - 24R 47.46
25 - 99R 46.04
100 - 499R 44.20
500 +R 42.43

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RS stock no.:
653-196
Mfr. Part No.:
SIR5607DP-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

90.9A

Maximum Drain Source Voltage Vds

60V

Series

SIR5607DP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.007Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

31.7nC

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.26 mm

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay P-channel MOSFET designed for efficient switching in Compact power systems. It supports up to 60 V drain-source voltage and is housed in a PowerPAK SO-8 package. Built using TrenchFET Gen V technology, it offers very low RDS(on), which minimizes voltage drop and conduction losses.

Pb Free

Halogen free

RoHS compliant

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