Vishay SIR5607DP Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin PowerPAK SIR5607DP-T1-UE3
- RS stock no.:
- 653-196
- Mfr. Part No.:
- SIR5607DP-T1-UE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tape of 1 unit)*
R 42,83
(exc. VAT)
R 49,25
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 6,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | R 42.83 |
| 10 - 24 | R 41.76 |
| 25 - 99 | R 40.51 |
| 100 - 499 | R 38.89 |
| 500 + | R 37.33 |
*price indicative
- RS stock no.:
- 653-196
- Mfr. Part No.:
- SIR5607DP-T1-UE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | SIR5607DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.007Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31.7nC | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.26 mm | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series SIR5607DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.007Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31.7nC | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.26 mm | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay P-channel MOSFET designed for efficient switching in Compact power systems. It supports up to 60 V drain-source voltage and is housed in a PowerPAK SO-8 package. Built using TrenchFET Gen V technology, it offers very low RDS(on), which minimizes voltage drop and conduction losses.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay SIR5607DP Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SIR5607DP-T1-UE3
- Vishay SiR Type P-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3
- Vishay SISS176LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK
- Vishay SiR870BDP Type N-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK SISS178LDN-T1-UE3
- Vishay SiR870BDP Type N-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK SIR870BDP-T1-UE3
- Vishay SISS176LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK SISS176LDN-T1-UE3