Vishay SIR4156LDP Type N-Channel Single MOSFETs, 25.7 A, 100 V Enhancement, 8-Pin PowerPAK SIR4156LDP-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 25 515,00

(exc. VAT)

R 29 343,00

(inc. VAT)

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3000 +R 8.505R 25,515.00

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RS stock no.:
653-190
Mfr. Part No.:
SIR4156LDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

25.7A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK

Series

SIR4156LDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.033Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

43W

Typical Gate Charge Qg @ Vgs

8.8nC

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

1.72mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and optimized thermal performance.

Pb Free

Halogen free

RoHS compliant

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