Vishay SIRA10DDP Type N-Channel Single MOSFETs, 96 A, 30 V Enhancement, 8-Pin PowerPAK SIRA10DDP-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 13 593,00

(exc. VAT)

R 15 633,00

(inc. VAT)

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Per Reel*
3000 +R 4.531R 13,593.00

*price indicative

RS stock no.:
653-141
Mfr. Part No.:
SIRA10DDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

30V

Series

SIRA10DDP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0031Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

43W

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.15mm

Height

1.04mm

Width

6.15 mm

Automotive Standard

No

The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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