Vishay SIS9122 Dual N-Channel Single MOSFETs, 7.1 A, 100 V Enhancement, 8-Pin PowerPAK SIS9122DN-T1-GE3

Image representative of range

View all MOSFETs

Subtotal (1 reel of 3000 units)*

R 30 288,00

(exc. VAT)

R 34 830,00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +R 10.096R 30,288.00

*price indicative

RS stock no.:
653-097
Mfr. Part No.:
SIS9122DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Dual N

Maximum Continuous Drain Current Id

7.1A

Maximum Drain Source Voltage Vds

100V

Series

SIS9122

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.16Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

17.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.8nC

Maximum Operating Temperature

150°C

Height

0.8mm

Length

3.3mm

Width

3.3 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay automotive-grade dual N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK 1212-8 Dual, it utilizes TrenchFET Gen IV technology for optimized electrical and thermal performance.

Pb Free

Halogen free

RoHS compliant

Related links