ROHM R4P Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin MPT3 R4P020N06HZGT100
- RS stock no.:
- 646-554
- Mfr. Part No.:
- R4P020N06HZGT100
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 tape of 10 units)*
R 81,52
(exc. VAT)
R 93,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 8.152 | R 81.52 |
| 100 - 240 | R 7.948 | R 79.48 |
| 250 - 990 | R 7.71 | R 77.10 |
| 1000 - 4990 | R 7.402 | R 74.02 |
| 5000 + | R 7.106 | R 71.06 |
*price indicative
- RS stock no.:
- 646-554
- Mfr. Part No.:
- R4P020N06HZGT100
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | R4P | |
| Package Type | MPT3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Width | 4.70 mm | |
| Length | 4.30mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Series R4P | ||
Package Type MPT3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Width 4.70 mm | ||
Length 4.30mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The ROHM 4 volt drive N channel metal oxide semiconductor field effect transistor features low on resistance and supports 4 volt drive operation.
AEC-Q101 Qualified
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