Infineon IMW65 Type N-Channel MOSFET, 130 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R010M2HXKSA1

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R 634,13

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R 729,25

(inc. VAT)

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1 - 9R 634.13
10 - 99R 618.28
100 +R 599.73

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RS stock no.:
351-950
Mfr. Part No.:
IMW65R010M2HXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

130A

Output Power

312W

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO-247

Series

IMW65

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Height

5.3mm

Length

16.3mm

Width

21.5 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Enables BOM savings

Highest reliability

Enables top efficiency and power density

Ease of use

Full compatibility with existing vendors

Allows designs without fan or heatsink

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