Infineon IPW Type N-Channel MOSFET, 21 A, 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1

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Subtotal (1 tube of 30 units)*

R 3 083,76

(exc. VAT)

R 3 546,33

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30R 102.792R 3,083.76
60 +R 100.223R 3,006.69

*price indicative

RS stock no.:
273-3027
Mfr. Part No.:
IPW65R115CFD7AXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO-247

Series

IPW

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

115mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

114W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

41nC

Maximum Operating Temperature

150°C

Standards/Approvals

AECQ101, RoHS

Automotive Standard

AEC-Q101

The Infineon automotive SJ power MOSFET is in TO-247 package is part of the automotive qualified 650V cool MOS SJ power MOSFET CFD7A product family.

Enabling of higher power density designs

Scalable as designed for use in PFC and DC-DC stage

Granular portfolio available

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