Infineon IPW Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin PG-TO-247 IPW65R099CFD7AXKSA1
- RS stock no.:
- 273-3025
- Mfr. Part No.:
- IPW65R099CFD7AXKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 3 215,49
(exc. VAT)
R 3 697,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 210 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 107.183 | R 3,215.49 |
| 60 + | R 104.503 | R 3,135.09 |
*price indicative
- RS stock no.:
- 273-3025
- Mfr. Part No.:
- IPW65R099CFD7AXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPW | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 127W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, AECQ101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPW | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 127W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, AECQ101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V cool MOS N-channel automotive SJ power MOSFET in TO-247 package. It has highest reliability in the field meeting automotive lifetime requirements.
Enabling of higher power density designs
Granular portfolio available
Related links
- Infineon N-Channel MOSFET 650 V, 3-Pin D2PAK IPB65R099CFD7AATMA1
- Infineon IML SiC N-Channel MOSFET 650 V, 16-Pin PG-HDSOP-16 IMLT65R020M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R017M2HXTMA1
- onsemi N-Channel MOSFET 40 V, 8-Pin WDFN NTTFS5C453NLTAG
- onsemi NVTFS5C453NL N-Channel MOSFET 40 V, 8-Pin WDFN NVTFS5C453NLWFTAG
- Infineon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R060CFD7XKSA1
- Infineon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R115CFD7AXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1