Infineon IGLR65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R140D2XUMA1
- RS stock no.:
- 351-876
- Mfr. Part No.:
- IGLR65R140D2XUMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
R 326,17
(exc. VAT)
R 375,095
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,995 unit(s) shipping from 26 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 65.234 | R 326.17 |
| 50 - 95 | R 63.604 | R 318.02 |
| 100 + | R 61.696 | R 308.48 |
*price indicative
- RS stock no.:
- 351-876
- Mfr. Part No.:
- IGLR65R140D2XUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TSON-8 | |
| Series | IGLR65 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.17Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Maximum Power Dissipation Pd | 47W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TSON-8 | ||
Series IGLR65 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.17Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Maximum Power Dissipation Pd 47W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer and industrial applications with slim form factors.
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Bottom-side cooled package
JEDEC qualified (JESD47, JESD22)
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