Infineon Type N-Channel MOSFET, 195 A, 2000 V Enhancement FF5MR20KM1HHPSA1
- RS stock no.:
- 349-317
- Mfr. Part No.:
- FF5MR20KM1HHPSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
R 15 342,25
(exc. VAT)
R 17 643,59
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 19 November 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | R 15,342.25 |
*price indicative
- RS stock no.:
- 349-317
- Mfr. Part No.:
- FF5MR20KM1HHPSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 15.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 6.15V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 15.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 6.15V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- HU
The Infineon 62 mm CoolSiC MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre applied Thermal Interface Material.
High current density
Low switching losses
Superior gate oxide reliability
Robust integrated body diode
High cosmic ray robustness
High speed switching module
Symmetrical module design
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