Infineon EasyPACK Type N-Channel MOSFET, 65 A, 1200 V Enhancement Tray F3L11MR12W2M1HPB19BPSA1

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Subtotal (1 unit)*

R 6 153,22

(exc. VAT)

R 7 076,20

(inc. VAT)

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RS stock no.:
349-248
Mfr. Part No.:
F3L11MR12W2M1HPB19BPSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

1200V

Package Type

Tray

Series

EasyPACK

Mount Type

Screw

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Forward Voltage Vf

5.35V

Maximum Power Dissipation Pd

20mW

Maximum Gate Source Voltage Vgs

23 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60747, IEC 60068, RoHS, IEC 60749

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyPACK 2B CoolSiC MOSFET 3 level module in NPC2 topology 1200 V, 11mΩ G1 with NTC, pre applied thermal interface material and PressFIT contact technology. The MOSFET features best in class packaging with a compact height of just 12 mm, designed for optimal performance in power electronics. It utilizes leading edge Wide Bandgap materials, enhancing its efficiency and reliability. The design incorporates very low module stray inductance, ensuring minimal power loss and improved switching behaviour.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

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