onsemi NCV Type N, Type P-Channel MOSFET, 7 A, 65 V Dual, 8-Pin SOIC-8 NCV8406DD1CR2G
- RS stock no.:
- 327-795
- Mfr. Part No.:
- NCV8406DD1CR2G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (10 units, on tapes of 10)*
R 204,21
(exc. VAT)
R 234,84
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 20.421 | R 204.21 |
| 100 - 240 | R 19.91 | R 199.10 |
| 250 - 490 | R 19.313 | R 193.13 |
| 500 - 990 | R 18.54 | R 185.40 |
| 1000 + | R 17.798 | R 177.98 |
*price indicative
- RS stock no.:
- 327-795
- Mfr. Part No.:
- NCV8406DD1CR2G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 65V | |
| Series | NCV | |
| Package Type | SOIC-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Dual | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 1.2W | |
| Maximum Gate Source Voltage Vgs | 14V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Length | 5mm | |
| Width | 4mm | |
| Height | 1.75mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 65V | ||
Series NCV | ||
Package Type SOIC-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Dual | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 1.2W | ||
Maximum Gate Source Voltage Vgs 14V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Length 5mm | ||
Width 4mm | ||
Height 1.75mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Dual protected Low-Side Smart Discrete device offers comprehensive protection features, including overcurrent, over temperature, ESD, and integrated Drain-to-Gate clamping for overvoltage protection. It is designed for reliable performance in harsh automotive environments.
Short Circuit Protection
Thermal Shutdown with Automatic Restart
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