Infineon OptiMOS Type N-Channel MOSFET, 637 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQDH45N04LM6CGATMA1
- RS stock no.:
- 285-039
- Mfr. Part No.:
- IQDH45N04LM6CGATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 117,07
(exc. VAT)
R 134,63
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 02 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 58.535 | R 117.07 |
| 20 - 198 | R 57.07 | R 114.14 |
| 200 - 998 | R 55.36 | R 110.72 |
| 1000 - 1998 | R 53.145 | R 106.29 |
| 2000 + | R 51.02 | R 102.04 |
*price indicative
- RS stock no.:
- 285-039
- Mfr. Part No.:
- IQDH45N04LM6CGATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 637A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 637A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an Advanced power transistor excels in high performance applications, delivering exceptional efficiency and reliability. Designed within the OptiMOS 6 series, it showcases impressive electrical characteristics, setting a new standard for MOSFET technology. With 100% avalanche testing, users can Trust in its robustness, whether used in power management or motor control applications. Additionally, its RoHS compliance and halogen free attributes ensure adherence to strict environmental standards, making it a smart choice for eco conscious projects.
N channel design for logic level applications
Outstanding thermal resistance for heat dissipation
Engineered for Rapid switching efficiency
Avalanche rated for reliability under stress
Pb free and RoHS compliant for eco friendliness
Halogen free construction meets safety standards
JEDEC certified for industrial performance
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