Infineon OptiMOS Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
- RS stock no.:
- 284-945
- Mfr. Part No.:
- IQDH88N06LM5CGATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 152,54
(exc. VAT)
R 175,42
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 76.27 | R 152.54 |
| 20 - 198 | R 74.365 | R 148.73 |
| 200 - 998 | R 72.135 | R 144.27 |
| 1000 - 1998 | R 69.25 | R 138.50 |
| 2000 + | R 66.48 | R 132.96 |
*price indicative
- RS stock no.:
- 284-945
- Mfr. Part No.:
- IQDH88N06LM5CGATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 447A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.86mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 447A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.86mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is a high performance N channel MOSFET designed to provide exceptional efficiency and reliability for industrial applications. Utilising Advanced semiconductor technology, this component delivers superior thermal management and low on resistance, making it Ideal for power conversion solutions. With its high avalanche energy rating and rigorous validation against JEDEC standards, you can Trust this product to meet stringent operational demands while maintaining safety and durability.
Optimised thermal resistance for cooling
Qualified for industrial reliability
Pb free lead plating for eco friendliness
Low gate drive requirements simplify circuits
Robust design for high drain currents
100% avalanche tested for reliability
Compact package for easy integration
Related links
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 25 V, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 9-Pin PG-TTFN-9 IQE046N08LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 25 V, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 150 V, 9-Pin PG-TTFN-9 IQD063N15NM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1