ROHM RV7 Type N-Channel MOSFET, 60 V Enhancement, 3-Pin DFN1212-3 RV7L020GNTCR1
- RS stock no.:
- 265-382
- Mfr. Part No.:
- RV7L020GNTCR1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 tape of 25 units)*
R 113,85
(exc. VAT)
R 130,925
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 100 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | R 4.554 | R 113.85 |
| 100 - 225 | R 4.44 | R 111.00 |
| 250 - 475 | R 4.307 | R 107.68 |
| 500 - 975 | R 4.135 | R 103.38 |
| 1000 + | R 3.97 | R 99.25 |
*price indicative
- RS stock no.:
- 265-382
- Mfr. Part No.:
- RV7L020GNTCR1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RV7 | |
| Package Type | DFN1212-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 157mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.5mm | |
| Length | 1.2mm | |
| Standards/Approvals | No | |
| Width | 1.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RV7 | ||
Package Type DFN1212-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 157mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.5mm | ||
Length 1.2mm | ||
Standards/Approvals No | ||
Width 1.2 mm | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for switching and load switching applications. Housed in a leadless ultra small SMD plastic package of 1.2x1.2x0.5 mm with an exposed drain pad, it offers excellent thermal conduction, ensuring efficient performance in compact electronic designs.
RoHS compliant
Low on resistance
Pb free lead plating
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