ROHM RV7 N-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin DFN1212-3 RV7E040AJTCR1
- RS stock no.:
- 265-381
- Mfr. Part No.:
- RV7E040AJTCR1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 25 units)*
R 105,50
(exc. VAT)
R 121,25
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | R 4.22 | R 105.50 |
| 100 - 225 | R 4.114 | R 102.85 |
| 250 - 475 | R 3.99 | R 99.75 |
| 500 - 975 | R 3.831 | R 95.78 |
| 1000 + | R 3.678 | R 91.95 |
*price indicative
- RS stock no.:
- 265-381
- Mfr. Part No.:
- RV7E040AJTCR1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | DFN1212-3 | |
| Series | RV7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.0nC | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.2mm | |
| Width | 1.2mm | |
| Height | 500μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type DFN1212-3 | ||
Series RV7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.0nC | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.2mm | ||
Width 1.2mm | ||
Height 500μm | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for switching and load switching applications. Housed in a leadless ultra small SMD plastic package of 1.2x1.2x0.5 mm with an exposed drain pad, it offers excellent thermal conduction, ensuring efficient performance in compact electronic designs.
RoHS compliant
Low on resistance
Pb free lead plating
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