ROHM Dual (Nch+Pch) HP8K 2 Type N, Type P-Channel MOSFET, 100 V Enhancement, 8-Pin HSOP-8 HP8ME5TB1

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Subtotal (1 tape of 10 units)*

R 139,63

(exc. VAT)

R 160,57

(inc. VAT)

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Units
Per unit
Per Tape*
10 - 90R 13.963R 139.63
100 - 240R 13.614R 136.14
250 - 490R 13.206R 132.06
500 - 990R 12.678R 126.78
1000 +R 12.171R 121.71

*price indicative

Packaging Options:
RS stock no.:
264-877
Mfr. Part No.:
HP8ME5TB1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Drain Source Voltage Vds

100V

Package Type

HSOP-8

Series

HP8K

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

273mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

19.7nC

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual (Nch+Pch)

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 8.5A. Designed in an HSOP8 package and offers low on-resistance.

Low on-resistance

Small Surface Mount Package (HSOP8)

Pb-free lead plating and RoHS compliant

Halogen Free

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