ROHM R60 N-Channel MOSFET, 1.3 A, 600 V Enhancement, 3-Pin SOT-223-3 R6003JND4TL1
- RS stock no.:
- 264-849
- Mfr. Part No.:
- R6003JND4TL1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
R 143,62
(exc. VAT)
R 165,16
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 60 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 14.362 | R 143.62 |
| 100 - 240 | R 14.003 | R 140.03 |
| 250 - 490 | R 13.583 | R 135.83 |
| 500 - 990 | R 13.04 | R 130.40 |
| 1000 + | R 12.518 | R 125.18 |
*price indicative
- RS stock no.:
- 264-849
- Mfr. Part No.:
- R6003JND4TL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | R60 | |
| Package Type | SOT-223-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.15Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 7.8W | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series R60 | ||
Package Type SOT-223-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.15Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 7.8W | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 600V 1.3A SOT 223 3 Presto MOS with integrated high-speed diode is a power MOSFET with fast reverse recovery time, suitable for the switching applications. Which increases design flexibility while maintaining the industry’s fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners.
Fast reverse recovery time
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating and RoHS compliant
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