IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN24N100

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Subtotal (1 unit)*

R 967,21

(exc. VAT)

R 1 112,29

(inc. VAT)

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  • 23 unit(s) ready to ship from another location
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Units
Per unit
1 - 4R 967.21
5 - 24R 943.03
25 - 99R 914.74
100 - 249R 878.15
250 +R 843.02

*price indicative

RS stock no.:
194-091
Mfr. Part No.:
IXFN24N100
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

1kV

Package Type

SOT-227

Series

HiperFET

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

568W

Typical Gate Charge Qg @ Vgs

267nC

Maximum Operating Temperature

150°C

Height

9.6mm

Standards/Approvals

No

Length

38.23mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Series


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