IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN24N100

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Subtotal (1 unit)*

R 963,51

(exc. VAT)

R 1 108,04

(inc. VAT)

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Units
Per unit
1 - 4R 963.51
5 - 24R 939.42
25 - 99R 911.24
100 - 249R 874.79
250 +R 839.80

*price indicative

RS stock no.:
194-091
Mfr. Part No.:
IXFN24N100
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

1kV

Series

HiperFET

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

568W

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

267nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

9.6mm

Width

25.42 mm

Standards/Approvals

No

Length

38.23mm

Automotive Standard

No

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