IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100

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Subtotal (1 unit)*

R 1 485,35

(exc. VAT)

R 1 708,15

(inc. VAT)

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1 - 4R 1,485.35
5 - 24R 1,448.22
25 +R 1,404.77

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RS stock no.:
193-795
Mfr. Part No.:
IXFN36N100
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

1kV

Series

HiperFET

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

240mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

700W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

380nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

38.23mm

Height

9.6mm

Width

25.42 mm

Automotive Standard

No

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