STMicroelectronics STripFET II N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 STD12NF06T4
- RS stock no.:
- 151-938
- Mfr. Part No.:
- STD12NF06T4
- Manufacturer:
- STMicroelectronics
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Bulk discount available
View bulk pricing optionsSubtotal (20 units, on tapes of 20)*
R 404,88
(exc. VAT)
R 465,62
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 980 unit(s) shipping from 06 October 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | R 20.244 | R 404.88 |
| 200 - 480 | R 19.738 | R 394.76 |
| 500 - 980 | R 19.146 | R 382.92 |
| 1000 - 1980 | R 18.38 | R 367.60 |
| 2000 + | R 17.645 | R 352.90 |
*price indicative
- RS stock no.:
- 151-938
- Mfr. Part No.:
- STD12NF06T4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | STripFET II | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 30W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series STripFET II | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 30W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters for telecom and computer applications.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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