STMicroelectronics STripFET II Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25NF10T4
- RS stock no.:
- 151-917
- Mfr. Part No.:
- STD25NF10T4
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 tape of 10 units)*
R 258,82
(exc. VAT)
R 297,64
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 7,450 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 25.882 | R 258.82 |
| 100 - 240 | R 25.235 | R 252.35 |
| 250 - 490 | R 24.478 | R 244.78 |
| 500 - 990 | R 23.499 | R 234.99 |
| 1000 + | R 22.559 | R 225.59 |
*price indicative
- RS stock no.:
- 151-917
- Mfr. Part No.:
- STD25NF10T4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | STripFET II | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series STripFET II | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters for telecom and computer applications.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
Related links
- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 STD25NF10T4
- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 STD25NF10LT4
- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 STP120NF10
- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 STP80NF10FP