STMicroelectronics SuperMESH Type N-Channel MOSFET, 2 A, 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z

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Subtotal (1 reel of 2500 units)*

R 28 760,00

(exc. VAT)

R 33 075,00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +R 11.504R 28,760.00

*price indicative

RS stock no.:
151-934
Mfr. Part No.:
STD2HNK60Z
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.8Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

11nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

6.6 mm

Height

2.4mm

Length

10.1mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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