STMicroelectronics SuperMESH Type N-Channel MOSFET, 2 A, 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z

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R 153,58

(exc. VAT)

R 176,62

(inc. VAT)

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Units
Per unit
Per Tape*
20 - 180R 7.679R 153.58
200 - 480R 7.487R 149.74
500 - 980R 7.262R 145.24
1000 - 1980R 6.972R 139.44
2000 +R 6.693R 133.86

*price indicative

Packaging Options:
RS stock no.:
151-935
Mfr. Part No.:
STD2HNK60Z
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.8Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

11nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Height

2.4mm

Length

10.1mm

Width

6.6 mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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