STMicroelectronics SuperMESH Type N-Channel MOSFET, 85 A, 1000 V Enhancement, 3-Pin TO-252 STD2NK100Z

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Subtotal (1 tape of 10 units)*

R 336,15

(exc. VAT)

R 386,57

(inc. VAT)

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Units
Per unit
Per Tape*
10 - 90R 33.615R 336.15
100 - 240R 32.775R 327.75
250 - 490R 31.792R 317.92
500 - 990R 30.52R 305.20
1000 +R 29.299R 292.99

*price indicative

Packaging Options:
RS stock no.:
151-902
Mfr. Part No.:
STD2NK100Z
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

85A

Maximum Drain Source Voltage Vds

1000V

Series

SuperMESH

Package Type

TO-252

Pin Count

3

Maximum Drain Source Resistance Rds

8.5Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

70W

Typical Gate Charge Qg @ Vgs

16nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

159°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

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