MPN

STMicroelectronics SuperMESH N-Channel MOSFET, 4.4 A, 500 V Enhancement, 3-Pin TO-252 STD5NK50ZT4

RS stock no.:: 151-461
Mfr. Part No.:: STD5NK50ZT4
Manufacturer:: STMicroelectronics

STMicroelectronics SuperMESH N-Channel MOSFET, 4.4 A, 500 V Enhancement, 3-Pin TO-252 STD5NK50ZT4

Image representative of range

Bulk discount available

View bulk pricing options

Subtotal (1 tape of 20 units)*

R 530,40

(exc. VAT)

R 610,00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Tape*
20 - 180	R 26.52	R 530.40
200 - 480	R 25.857	R 517.14
500 - 980	R 25.081	R 501.62
1000 - 1980	R 24.078	R 481.56
2000 +	R 23.115	R 462.30

*price indicative

RS stock no.:: 151-461
Mfr. Part No.:: STD5NK50ZT4
Manufacturer:: STMicroelectronics

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	4.4A
	Maximum Drain Source Voltage Vds	500V
	Series	SuperMESH
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	20nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Height	2.4mm
	Standards/Approvals	RoHS
	Length	10.1mm
	Width	6.6mm
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 4.4A
	Maximum Drain Source Voltage Vds 500V
	Series SuperMESH
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 20nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Height 2.4mm
	Standards/Approvals RoHS
	Length 10.1mm
	Width 6.6mm
	Automotive Standard No

Datasheet - STD5NK50ZT4

COO (Country of Origin):: CN

The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

STMicroelectronics SuperMESH N-Channel MOSFET, 4.4 A, 500 V Enhancement, 3-Pin TO-252 STD5NK50ZT4

Bulk pricing options

Related links