STMicroelectronics SuperMESH Dual N-Channel MOSFET, 0.4 A, 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- RS stock no.:
- 151-447
- Mfr. Part No.:
- STS1DNC45
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tape of 10 units)*
R 285,48
(exc. VAT)
R 328,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 5,960 unit(s) shipping from 06 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 28.548 | R 285.48 |
| 100 - 240 | R 27.834 | R 278.34 |
| 250 - 490 | R 26.999 | R 269.99 |
| 500 - 990 | R 25.919 | R 259.19 |
| 1000 + | R 24.882 | R 248.82 |
*price indicative
- RS stock no.:
- 151-447
- Mfr. Part No.:
- STS1DNC45
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Dual N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.4A | |
| Maximum Drain Source Voltage Vds | 450V | |
| Package Type | SO-8 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Dual N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.4A | ||
Maximum Drain Source Voltage Vds 450V | ||
Package Type SO-8 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Standard outline for easy automated surface mount assembly
Gate charge minimized
Related links
- STMicroelectronics SuperMESH Dual N-Channel MOSFET 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin
- Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays 240 V Enhancement, 8-Pin SOIC TD9944TG-G
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF
- ROHM SH8KC5 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin SOP-8 SH8KC5TB1
- Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon ISA Dual N-Channel MOSFET 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1