Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF

RS stock no.:: 217-2603
Mfr. Part No.:: IRF7341GTRPBF
Manufacturer:: Infineon

Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF

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Subtotal (1 pack of 10 units)*

R 227,93

(exc. VAT)

R 262,12

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 20 unit(s) shipping from 29 December 2025
Plus 5,890 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Pack*
10 - 10	R 22.793	R 227.93
20 - 90	R 22.223	R 222.23
100 - 240	R 21.556	R 215.56
250 - 490	R 20.694	R 206.94
500 +	R 19.866	R 198.66

*price indicative

RS stock no.:: 217-2603
Mfr. Part No.:: IRF7341GTRPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.1A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	29nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.4W
	Maximum Gate Source Voltage Vgs	20 V
	Transistor Configuration	Dual N Channel Mosfet
	Maximum Operating Temperature	175°C
	Height	1.5mm
	Length	5mm
	Standards/Approvals	No
	Width	4 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.1A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 29nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.4W
	Maximum Gate Source Voltage Vgs 20 V
	Transistor Configuration Dual N Channel Mosfet
	Maximum Operating Temperature 175°C
	Height 1.5mm
	Length 5mm
	Standards/Approvals No
	Width 4 mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet - IRF7341GTRPBF

The Infineon HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Advanced Process Technology

Dual N-Channel MOSFET

Ultra Low On-Resistance

175°C Operating Temperature

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF

FREE delivery for orders over R 1,500.00

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