STMicroelectronics SuperMESH Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4

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Subtotal (1 tape of 20 units)*

R 197,54

(exc. VAT)

R 227,18

(inc. VAT)

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Units
Per unit
Per Tape*
20 - 180R 9.877R 197.54
200 - 480R 9.63R 192.60
500 - 980R 9.341R 186.82
1000 - 1980R 8.967R 179.34
2000 +R 8.609R 172.18

*price indicative

Packaging Options:
RS stock no.:
151-440
Mfr. Part No.:
STD4NK60ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

18.8nC

Maximum Operating Temperature

150°C

Height

2.39mm

Standards/Approvals

RoHS

Length

10.34mm

Width

6.73 mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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