IXYS, Type N-Channel high Speed IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 920-1007
- Mfr. Part No.:
- IXYH50N120C3D1
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 tube of 30 units)*
R 5 756,79
(exc. VAT)
R 6 620,31
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 30 unit(s) shipping from 25 November 2026
- Plus 30 unit(s) shipping from 02 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 191.893 | R 5,756.79 |
| 60 - 90 | R 187.095 | R 5,612.85 |
| 120 - 270 | R 181.482 | R 5,444.46 |
| 300 - 570 | R 174.223 | R 5,226.69 |
| 600 + | R 167.254 | R 5,017.62 |
*price indicative
- RS stock no.:
- 920-1007
- Mfr. Part No.:
- IXYH50N120C3D1
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | high Speed IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 625W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.32mm | |
| Series | GenX3TM | |
| Standards/Approvals | International Standard Package | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type high Speed IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 625W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 4V | ||
Maximum Operating Temperature 150°C | ||
Length 20.32mm | ||
Series GenX3TM | ||
Standards/Approvals International Standard Package | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.