IXYS, Type N-Channel high Speed IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

R 4 813,92

(exc. VAT)

R 5 536,02

(inc. VAT)

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  • 210 unit(s) ready to ship from another location
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Per unit
Per Tube*
30 +R 160.464R 4,813.92

*price indicative

RS stock no.:
146-1767
Mfr. Part No.:
IXYH50N120C3
Manufacturer:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current Ic

50A

Product Type

high Speed IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

750W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

50kHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

3.5V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

International Standard Package

Width

16.26 mm

Series

GenX3TM

Length

20.32mm

Automotive Standard

No

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)

Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage

Short circuit capability for 10usec

Positive on-state voltage temperature coefficient

Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes

International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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