A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Features
• Positive temperaure co-efficient for easy parallel operation • High current capability • Low saturation voltage • High input impedance • Tightened parameter distribution
Quoted current ratings apply when junction temperature Tc = +100°C.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
