onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole

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Subtotal (1 tube of 30 units)*

R 2 025,93

(exc. VAT)

R 2 329,83

(inc. VAT)

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Per Tube*
30 +R 67.531R 2,025.93

*price indicative

RS stock no.:
166-2181
Mfr. Part No.:
FGA60N65SMD
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

600 W

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Discrete IGBTs, Fairchild Semiconductor



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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