STMicroelectronics STGW20V60DF, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 791-9374
- Mfr. Part No.:
- STGW20V60DF
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 316,31
(exc. VAT)
R 363,755
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 185 unit(s) shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 63.262 | R 316.31 |
| 50 - 70 | R 61.68 | R 308.40 |
| 75 - 295 | R 59.83 | R 299.15 |
| 300 - 595 | R 57.436 | R 287.18 |
| 600 + | R 55.138 | R 275.69 |
*price indicative
- RS stock no.:
- 791-9374
- Mfr. Part No.:
- STGW20V60DF
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 167W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Standards/Approvals | RoHS | |
| Series | V | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 167W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 20.15mm | ||
Length 15.75mm | ||
Standards/Approvals RoHS | ||
Series V | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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