STMicroelectronics STGW40H60DLFB, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 792-5791
- Mfr. Part No.:
- STGW40H60DLFB
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 180,10
(exc. VAT)
R 207,12
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 24 | R 90.05 | R 180.10 |
| 26 - 98 | R 87.80 | R 175.60 |
| 100 - 248 | R 85.165 | R 170.33 |
| 250 - 498 | R 81.76 | R 163.52 |
| 500 + | R 78.49 | R 156.98 |
*price indicative
- RS stock no.:
- 792-5791
- Mfr. Part No.:
- STGW40H60DLFB
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 283W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | H | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 283W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series H | ||
Length 15.75mm | ||
Height 20.15mm | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- STMicroelectronics 40 A 600 V Through Hole
- STMicroelectronics STGW20V60DF 40 A 600 V Through Hole
- STMicroelectronics STGW20V60F 40 A 600 V Through Hole
- STMicroelectronics STGW20H60DF 40 A 600 V Through Hole
- Infineon IKW40N60H3FKSA1 40 A 600 V Through Hole
- Infineon 40 A 600 V Through Hole
- Infineon IKW20N60H3FKSA1 40 A 600 V Through Hole
- STMicroelectronics 40 A 600 V Through Hole