STMicroelectronics STGW40H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

R 195,67

(exc. VAT)

R 225,02

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 24R 97.835R 195.67
26 - 98R 95.39R 190.78
100 - 248R 92.53R 185.06
250 - 498R 88.83R 177.66
500 +R 85.275R 170.55

*price indicative

Packaging Options:
RS stock no.:
792-5791
Mfr. Part No.:
STGW40H60DLFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

283 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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