Semikron Danfoss SKM50GB12T4 Dual Half Bridge IGBT Module, 81 A 1200 V, 7-Pin SEMITRANS2, Panel Mount
- RS stock no.:
- 687-4967
- Mfr. Part No.:
- SKM50GB12T4
- Manufacturer:
- Semikron Danfoss
Bulk discount available
Subtotal (1 unit)*
R 1 776,75
(exc. VAT)
R 2 043,26
(inc. VAT)
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In Stock
- Plus 49 unit(s) shipping from 05 January 2026
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Units | Per unit |
|---|---|
| 1 - 4 | R 1,776.75 |
| 5 - 9 | R 1,732.33 |
| 10 - 49 | R 1,680.36 |
| 50 - 99 | R 1,613.15 |
| 100 + | R 1,548.62 |
*price indicative
- RS stock no.:
- 687-4967
- Mfr. Part No.:
- SKM50GB12T4
- Manufacturer:
- Semikron Danfoss
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron Danfoss | |
| Maximum Continuous Collector Current | 81 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Configuration | Dual Half Bridge | |
| Package Type | SEMITRANS2 | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Transistor Configuration | Series | |
| Dimensions | 94 x 34 x 30.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Semikron Danfoss | ||
Maximum Continuous Collector Current 81 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Configuration Dual Half Bridge | ||
Package Type SEMITRANS2 | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Transistor Configuration Series | ||
Dimensions 94 x 34 x 30.1mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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